DocumentCode
2095552
Title
The physical and numerical implications of the noise modeling method: IFM, CPM, and ERS
Author
Nah, Hyunchul ; Hong, Sung-min ; Park, Young June ; Min, Hong Shick
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
fYear
2003
fDate
3-5 Sept. 2003
Firstpage
75
Lastpage
78
Abstract
In this paper, several aspects of the numerical methods for the noise modeling are introduced such as the impedance field method, the characteristic potential method, and the extended Ramo-Shockley theorem and their implications are discussed. The challenges faced in the 1/f noise modeling of MOSFETs and suggestions for the direction of the noise modeling are also discussed.
Keywords
1/f noise; MOSFET; semiconductor device models; semiconductor device noise; 1/f noise; MOSFET; characteristic potential method; extended Ramo-Shockley theorem; impedance field method; noise modeling; numerical methods; Circuit noise; Computer science; Fluctuations; Impedance; MOSFETs; Numerical models; Semiconductor device noise; Semiconductor devices; Semiconductor process modeling; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7826-1
Type
conf
DOI
10.1109/SISPAD.2003.1233641
Filename
1233641
Link To Document