DocumentCode
2095620
Title
Hydrodynamic simulation of RF noise in deep-submicron MOSFETs
Author
Oh, Tae-young ; Jungemann, Christoph ; Dutton, Robert W.
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
fYear
2003
fDate
3-5 Sept. 2003
Firstpage
87
Lastpage
90
Abstract
A noise model for MOSFETs based on analytical microscopic noise sources has been developed and noise simulations based on the hydrodynamic model have been performed. The drain and gate excess noise parameters and correlation coefficient are extracted and the reasons for noise parameter dependence on the channel length are explained.
Keywords
MOSFET; semiconductor device models; semiconductor device noise; MOSFETs; analytical microscopic noise sources; channel length; correlation coefficient; excess noise parameters; hydrodynamic model; noise model; Circuit noise; Electrodes; High definition video; Hydrodynamics; Impedance; MOSFETs; Microscopy; Radio frequency; Semiconductor device modeling; Transfer functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7826-1
Type
conf
DOI
10.1109/SISPAD.2003.1233644
Filename
1233644
Link To Document