DocumentCode
2096004
Title
GaAs based gratingless wavelength tunable semiconductor laser
Author
Wenxiong Wei ; Lei Wang ; Jian-Jun He
Author_Institution
Dept. of Opt. Eng., Zhejiang Univ., Hangzhou, China
fYear
2012
fDate
7-10 Nov. 2012
Firstpage
1
Lastpage
3
Abstract
We report a simple and compact wavelength switchable laser based on GaAs without grating and epitaxial regrowth. Single-electrode controlled wavelength switching over 30 channels with channel spacing of 0.4nm is achieved, with a SMSR around 30dB. The center wavelength is 877nm, suitable for biological detection.
Keywords
III-V semiconductors; aluminium compounds; biological techniques; channel spacing; gallium arsenide; laser beam applications; laser tuning; optical switches; semiconductor lasers; AlGaAs-GaAs; SMSR; biological detection; channel spacing; gratingless wavelength tunable semiconductor laser; single-electrode controlled wavelength switching; wavelength 877 nm;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location
Guangzhou
ISSN
2162-108X
Print_ISBN
978-1-4673-6274-0
Type
conf
Filename
6510884
Link To Document