DocumentCode
2096046
Title
Experimental demonstration of subnano-second wavelength switching in V-coupled-cavity semiconductor laser
Author
Shanli Guo ; Jianjun Meng ; Lei Wang ; Li Zou ; Hongli Zhu ; Jian-Jun He
Author_Institution
Dept. of Opt. Eng., Zhejiang Univ., Hangzhou, China
fYear
2012
fDate
7-10 Nov. 2012
Firstpage
1
Lastpage
3
Abstract
The tuning characteristics based on both free carrier dispersion and thermal effect induced by the tuning current of a V-coupled-cavity laser are investigated. Sub-nanosecond and tens of microseconds wavelength switching time between two neighboring channels are measured, respectively.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser cavity resonators; laser tuning; optical dispersion; optical switches; ridge waveguides; semiconductor lasers; thermo-optical effects; waveguide lasers; InGaAsP-InP; V-coupled-cavity semiconductor laser; free carrier dispersion; neighboring channels; subnanosecond wavelength switching; thermal effect; tuning current;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location
Guangzhou
ISSN
2162-108X
Print_ISBN
978-1-4673-6274-0
Type
conf
Filename
6510886
Link To Document