Modeling gate leakage in InAs/AlSb HEMTs

Author

Ancona, M.G. ; Boos, J.B. ; Papanicolaou, N. ; Chang, W. ; Bennett, B.R. ; Park, D.

Author_Institution

Div. of Electron. Sci. & Technol., Naval Res. Lab., Washington, DC, USA

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

295

Lastpage

298

Abstract

To simulate gate leakage in InAs/AlSb HEMTs, we create a detailed model within the framework of density gradient theory that incorporates the entire InAs/AlSb heterostructure, the quantum confinement and non-parabolicity effects in the InAs well and generation/recombination at the Type II InAs/AlSb heterojunction (via both the spatially indirect hand-to-hand process and interface traps). Each of these ingredients is described individually and they are then put together as a model of gate leakage. Comparisons of preliminary leakage simulations with experiment suggest that interface traps are essential for understanding the behavior especially at low voltages.

Keywords

III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; interface states; leakage currents; semiconductor device breakdown; semiconductor device models; InAs-AlSb; InAs/AlSb HEMTs; Type II InAs/AlSb heterojunction; density gradient theory; generation/recombination; interface traps; modeling gate leakage; nonparabolicity effects; preliminary leakage simulations; quantum confinement; spatially indirect hand-to-hand process; Current measurement; Gate leakage; HEMTs; Heterojunctions; Indium compounds; Leakage current; MODFETs; Schottky barriers; Schottky diodes; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233695

Filename

1233695