Monolithic growth of InAs-QDs with different absorption wavelengths in different areas for integrated optical devices

Author

Takata, Y. ; Ozaki, N. ; Ohkouchi, S. ; Sugimoto, Y. ; Ikeda, N. ; Watanabe, Y. ; Kitagawa, Y. ; Mizutani, A. ; Asakawa, K.

Author_Institution

Univ. of Tsukuba, Tsukuba

fYear

2007

fDate

21-25 Oct. 2007

Firstpage

30

Lastpage

31

Abstract

We have developed a technique for selective-area-growth (SAG) of InAs quantum dots (QDs) having different absorption wavelengths, with the goal of using them in all-optical integrated devices. This technique, using the metal-mask method and the insertion of a strain-reducing-layer, provides successful SAG of QDs absorbing at different wavelengths in different areas. This SAG technique is promising for various QD applications as well as our proposed photonic-crystal-based all optical switch (PC-SMZ) and digital flip-flop device (PC-FF).

Keywords

III-V semiconductors; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; InAs; digital flip-flop device; integrated optical devices; metal-mask method; monolithic growth; photonic-crystal-based all optical switch; quantum dots; selective-area-growth; strain-reducing-layer; Absorption; Flip-flops; Gallium arsenide; Optical control; Optical devices; Optical pulses; Optical switches; Photonic crystals; Strain control; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE

Conference_Location

Lake Buena Vista, FL

ISSN

1092-8081

Print_ISBN

978-1-4244-0925-9

Electronic_ISBN

1092-8081

Type

conf

DOI

10.1109/LEOS.2007.4382259

Filename

4382259