DocumentCode
2097072
Title
Doping Characterization of InAs/GaAs Quantum Dot Heterostructure by Cross-Sectional Scanning Capacitance Microscopy
Author
Zhao, Z.Y. ; Zhang, W.M. ; Yi, C. ; Stiff-Roberts, A.D. ; Rodriguez, B.J. ; Baddorf, A.P.
Author_Institution
Duke Univ., Durham
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
32
Lastpage
33
Abstract
Cross-section of multi-layer InAs/GaAs quantum dot heterostructure has been characterized using scanning capacitance microscopy to investigate dopant incorporation into quantum dots. Simulation of the corresponding band structure is used to better understand the experimental results.
Keywords
III-V semiconductors; band structure; gallium arsenide; indium compounds; semiconductor doping; semiconductor quantum dots; InAs-GaAs; band structure; cross-sectional scanning capacitance microscopy; doping; quantum dot heterostructure; Atomic force microscopy; Dark current; Electrons; Etching; Gallium arsenide; Infrared spectra; Molecular beam epitaxial growth; Quantum capacitance; Quantum dots; Semiconductor device doping;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382260
Filename
4382260
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