Structural evolution of amorphous silicon films during P-implantation

Author

Plugari, R. ; Vasile, E. ; Cobiami, C. ; Dascalu, D.

Author_Institution

Inst. of Microtechnol., Bucharest, Romania

Volume

1

fYear

1996

fDate

9-12 Oct 1996

Firstpage

57

Abstract

The initiation and evolution of silicon hillocks induced by phosphorus implantation processes on the surface of amorphous LPCVD silicon films, for doses in the range 2×10¹⁴ cm^-2-8×10¹⁵ cm^-2 and 50 keV beam energy, were investigated by scanning electron microscopy. The hillock density increases as the implantation dose is raised up to 5×10¹⁵ cm^-2. Further increase of the dose to 8×10¹⁵ cm^-2 determines a steep decrease of the hillock density. The effects of both the concentration gradient of the as-implanted phosphorus atoms and the change of microstructure were considered in order to explain the hillock formation and evolution

Keywords

CVD coatings; amorphous semiconductors; elemental semiconductors; ion implantation; phosphorus; scanning electron microscopy; semiconductor doping; semiconductor thin films; silicon; surface topography; LPCVD films; P-implantation; Si:P; amorphous films; concentration gradient; implantation dose; microstructure; scanning electron microscopy; silicon hillocks; structural evolution; Amorphous silicon; Electron microscopy; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1996., International

Conference_Location

Sinaia

Print_ISBN

0-7803-3223-7

Type

conf

DOI

10.1109/SMICND.1996.557305

Filename

557305