Modeling of trapped hole induced MOS device degradation during Fowler-Nordheim stress

Author

Samanta, Piyas ; Sarkar, C.K.

Author_Institution

Dept. of Phys., Jadaupar Univ., Calcutta, India

Volume

1

fYear

1996

fDate

9-12 Oct 1996

Firstpage

67

Abstract

Metal-Oxide-Silicon (MOS) device degradation due to trapped holes in the bulk of thin SiO₂ (22-33 nm) gate oxide during low fluence Fowler-Nordheim (FN) injection from the accumulated ⟨100⟩ n-Si of n⁺ polySi gate MOS capacitors has been theoretically modeled. The model is based on tunneling electron initiated band-to-band impact ionization (BTBII) as the possible source of generated holes. The validity of the present analysis has been compared with the experimental data of FN voltage shift ΔV_FN of Fazan et al. A comparative study of degradation during constant current and voltage FN stress is also presented

Keywords

MOS capacitors; hole traps; impact ionisation; semiconductor device models; tunnelling; Fowler-Nordheim stress; MOS device degradation; Si-SiO₂; SiO₂ gate oxide; band-to-band impact ionization; electron tunneling; model; n⁺ polySi gate MOS capacitor; trapped holes; Cathodes; Degradation; Electron traps; Energy capture; Equations; MOS devices; Physics; Stress; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1996., International

Conference_Location

Sinaia

Print_ISBN

0-7803-3223-7

Type

conf

DOI

10.1109/SMICND.1996.557307

Filename

557307