Novel Monolithically Chain Integrated Semiconductor Optical Amplifiers and electroabsorption modulators for high-speed optical modulation

Author

Lin, Fang-Zheng ; Wu, Tsu-Hsiu ; Chiu, Yi-Jen

Author_Institution

Nat. Sun Yat-Sen Univ., Kaohsiung

fYear

2007

fDate

21-25 Oct. 2007

Firstpage

270

Lastpage

271

Abstract

Monolithically chain integrated semiconductor optical amplifiers and electroabsorption modulators are proposed and demonstrated in this paper. A high modulation extinction ratio of 21 dB in 3.5 V is measured, which mainly resulted from long waveguide structure. Results also show that the operation of SOA from 0-60 mA doesn´t degrade the extinction ratio with an optical gain of 7 dB.

Keywords

electro-optical modulation; extinction coefficients; high-speed optical techniques; integrated optics; semiconductor optical amplifiers; current 0 mA to 60 mA; electroabsorption modulators; high-speed optical modulation; modulation extinction ratio; monolithically chain integrated semiconductor optical amplifiers; optical gain; voltage 3.5 V; waveguide structure; Bandwidth; Extinction ratio; High speed optical techniques; Impedance; Optical losses; Optical modulation; Optical pumping; Optical reflection; Optical waveguides; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE

Conference_Location

Lake Buena Vista, FL

ISSN

1092-8081

Print_ISBN

978-1-4244-0925-9

Electronic_ISBN

1092-8081

Type

conf

DOI

10.1109/LEOS.2007.4382381

Filename

4382381