DocumentCode
2100280
Title
InAs/InGaAsP quantum dot semiconductor optical amplifiers at 1.5 μm: fabrication and gain characteristics
Author
Kim, N.J. ; Lee, E.G. ; Oh, J.M. ; Lee, Daewoo
Author_Institution
Chungnam Nat. Univ., Daejeon
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
311
Lastpage
312
Abstract
This paper reports on a InAs/InGaAsP quantum dot semiconductor optical amplifiers (SOAs) operating at 1.5 μm. An SOA exhibited a fiber-to- fiber gain of 22.5 dB and a chip gain of 37 dB while maintaining the spectral gain shape with current.
Keywords
III-V semiconductors; amplification; gallium arsenide; indium compounds; semiconductor optical amplifiers; semiconductor quantum dots; InAs-InGaAsP; SOA; chip gain; fiber-to- fiber gain; gain 22.5 dB; gain 37 dB; quantum dot semiconductor optical amplifier; spectral gain shape; wavelength 1.5 μm; Gain; Optical device fabrication; Optical fiber devices; Optical materials; Optical waveguides; Power generation; Quantum dots; Semiconductor materials; Semiconductor optical amplifiers; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0924-2
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382402
Filename
4382402
Link To Document