DocumentCode
2100451
Title
GaAs nanowires fabricated using colloidal lithography and dry etching
Author
Ke Chen ; Mingyu Li ; Jian-Jun He ; LaPierre, Ray
Author_Institution
State Key Lab. of Modern Opt. Instrum., Zhejiang Univ., Hangzhou, China
fYear
2011
fDate
13-16 Nov. 2011
Firstpage
1
Lastpage
3
Abstract
A method for the fabrication of large-area well-ordered periodic GaAs nanowires have been developed based on colloidal lithography and a two-step inductively coupled plasma (ICP) etching. The reflectance spectra of the GaAs nanowire samples are measured and compared with nanowires fabricated by using molecular beam epitaxy.
Keywords
III-V semiconductors; etching; gallium arsenide; lithography; molecular beam epitaxial growth; nanofabrication; nanophotonics; nanowires; GaAs; colloidal lithography; dry etching; molecular beam epitaxy; nanowires fabrication; plasma etching; reflectance spectra; GaAs solar cell; Nanowire; colloidal lithography; spin-coating;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
Conference_Location
Shanghai
ISSN
2162-108X
Print_ISBN
978-0-8194-8961-6
Type
conf
Filename
6511071
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