Increase of Boron Precipitation in Nanostructured P-Type Silicon Germanium Thermoelectric Alloys

Author

Gao, Zhaihui ; Zamanipour, Zahra ; Vashaee, Daryoosh

Author_Institution

Helmerich Adv. Technol. Res. Center, Oklahoma State Univ., Tulsa, OK, USA

fYear

2012

fDate

19-20 April 2012

Firstpage

1

Lastpage

4

Abstract

Precipitation as the phenomenon responsible for the electrically inactive Boron in nanostructured Silicon-Germanium alloy (Si_1-xGe_x) is reported and investigated. It is shown that SiB₃ and SiB₆ are not responsible for the inactive boron as confirmed by X-ray diffraction analysis. The increase of the change of thermoelectric properties of Si_1-xGe_x alloy with thermal cycling accompanies the decrease of the crystallite size as confirmed by our experiments. The dependence of the carrier concentration on temperature was obtained from detailed theoretical modeling.

Keywords

Ge-Si alloys; Seebeck effect; X-ray diffraction; carrier density; crystallites; nanostructured materials; precipitation; semiconductor materials; Seebeck coefficient; Si_1-xGe_x; X-ray diffraction; boron precipitation; carrier concentration; crystallite size; nanostructured p-type silicon germanium thermoelectric alloys; thermal cycling; Annealing; Boron; Conductivity; Grain boundaries; Powders; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Green Technologies Conference, 2012 IEEE

Conference_Location

Tulsa, OK

ISSN

2166-546X

Print_ISBN

978-1-4673-0968-4

Electronic_ISBN

2166-546X

Type

conf

DOI

10.1109/GREEN.2012.6200978

Filename

6200978