Growth, Structural and Optical Properties of GaAs, InGaAs and AlGaAs Nanowires and Nanowire Heterostructures

Author

Joyce, Hannah J. ; Gao, Qiang ; Kim, Yong ; Tan, H. Hoe ; Jagadish, Chennupati

Author_Institution

Australian Nat. Univ., Canberra

fYear

2007

fDate

21-25 Oct. 2007

Firstpage

407

Lastpage

408

Abstract

This paper reports the growth of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostructures by MOCVD for applications in optoelectronics. Field emission scanning electron microscopy, low temperature photoluminescence, room temperature microphotoluminescence and transmission electron microscopy are used to characterize the nanowires.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; field emission electron microscopy; gallium arsenide; indium compounds; nanowires; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wires; transmission electron microscopy; AlGaAs; GaAs; InGaAs; MOCVD; field emission scanning electron microscopy; low temperature photoluminescence; nanowire heterostructures; optical properties; optoelectronics; room temperature microphotoluminescence; structural properties; temperature 293 K to 298 K; transmission electron microscopy; Electron emission; Electron optics; Gallium arsenide; Indium gallium arsenide; MOCVD; Nanowires; Scanning electron microscopy; Stimulated emission; Temperature; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE

Conference_Location

Lake Buena Vista, FL

ISSN

1092-8081

Print_ISBN

978-1-4244-0925-9

Electronic_ISBN

1092-8081

Type

conf

DOI

10.1109/LEOS.2007.4382451

Filename

4382451