DocumentCode
2101842
Title
Identifying the origin of Non-Radiative Recombination in In(Ga)As Quantum Dot Lasers
Author
Smowton, P.M. ; George, A.A. ; Sandall, I.C. ; Liu, H.Y. ; Hopkinson, M.
Author_Institution
Cardiff Univ., Cardiff
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
429
Lastpage
430
Abstract
Using p-doped and undoped InGaAs quantum-dot samples, where the elevated temperature threshold current performance is similar, we identify the important non-radiative recombination mechanisms in all InGaAs quantum-dot-lasers using measurements of the non- radiative recombination and un-amplified spontaneous emission.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; semiconductor quantum dots; InGaAs; non-radiative recombination; quantum dot lasers; un-amplified spontaneous emission; Current density; Current measurement; Gallium arsenide; Indium gallium arsenide; Quantum dot lasers; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature dependence; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382462
Filename
4382462
Link To Document