Gallium nitride electronics: Watt is the limit? [summary of GaN semiconductor devices]

Author

Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2004

fDate

21-23 June 2004

Firstpage

3

Abstract

This work presents a summary of the use of gallium nitride and its alloys in the development of semiconductor devices. It begins with a description of the HEMT and its use in microwave and power switching applications. Then follows a brief examination of MOSHFETs, MISHFETs and MISFETs. HBTs are discussed, along with the problems of poor electronic properties of p-type GaN and leakage through p-n junctions and etched surfaces. The paper concludes by referring to the POLFET which is based on modulating a 3D electron slab created by grading the polarization in the system, resulting in a MESFET with no doping.

Keywords

III-V semiconductors; MISFET; Schottky gate field effect transistors; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; microwave transistors; power semiconductor switches; power transistors; wide band gap semiconductors; GaN; HBT; HEMT; MISFET; MISHFET; MOSHFET; POLFET; gallium nitride semiconductor devices; graded polarization system; microwave transistors; modulated 3D electron slab; nondoped MESFET; p-n junction leakage; power switching transistors; Gallium alloys; Gallium nitride; HEMTs; III-V semiconductor materials; MISFETs; MOSHFETs; Microwave devices; P-n junctions; Power semiconductor switches; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

Conference_Location

Notre Dame, IN, USA

ISSN

1548-3770

Print_ISBN

0-7803-8284-6

Type

conf

DOI

10.1109/DRC.2004.1367754

Filename

1367754