• DocumentCode
    2102836
  • Title

    Performance of Reliable Mesa-Etched InP-based Geiger-Mode Avalanche Photodiodes and Arrays

  • Author

    Smith, G.M. ; Donnelly, J.P. ; McIntosh, K.A. ; Duerr, E.K. ; Shaver, D.C. ; Verghese, S. ; Funk, J.E. ; Kumar, N.R. ; Mahoney, L.J. ; Molvar, K.M. ; O´Donnell, F.J. ; Chapman, D.C. ; Oakley, D.C. ; Ray, K.G.

  • Author_Institution
    Massachusetts Inst. of Technol., Lexington
  • fYear
    2007
  • fDate
    21-25 Oct. 2007
  • Firstpage
    509
  • Lastpage
    510
  • Abstract
    The fabrication of reliable InP-based Geiger- mode avalanche photodiodes are described. Devices passivated with polyimide coated with silicon nitride have not degraded even while aging under more strenuous conditions than those used in fielded systems.
  • Keywords
    III-V semiconductors; avalanche photodiodes; indium compounds; passivation; polyimide; reliable mesa-etched inp-based geiger-mode avalanche photodiodes; Aging; Avalanche photodiodes; CMOS logic circuits; Degradation; Fabrication; Indium phosphide; Optical pulses; Passivation; Photonic band gap; Polyimides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-0925-9
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2007.4382503
  • Filename
    4382503
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2102836