Internal Field Analysis of High-Power Microwave in Impurities Semiconductor Materials

Author

Guo Jierong ; Cai Xinhua ; Wang Xianchun

Author_Institution

Inst. of Inf. Technol., Hunan Univ. of Arts & Sci., Changde, China

fYear

2009

fDate

24-26 Sept. 2009

Firstpage

1

Lastpage

4

Abstract

Caused the particularity of dielectric properties, Electromagnetic wave has their different transmit characteristics in impure semiconductor materials. Consider the high power microwave direct irradiation and transmission on semiconductor material, the law of electromagnetic waves disseminated in layered media is studied, and different substrates (usually medium and ideal conductor) are discussed separately. The treatment methods of doping concentration used in the simulation of semiconductor devices and transmission coefficient of the reflected theoretical formula of the different levels are calculated.

Keywords

electromagnetic waves; microwave power transmission; radiation effects; semiconductor doping; semiconductor materials; dielectric properties; doping concentration; electromagnetic waves; high power microwave direct irradiation; high power microwave transmission; impure semiconductor materials; internal field analysis; semiconductor devices; transmission coefficient; Dielectric substrates; Electromagnetic fields; Electromagnetic scattering; Frequency; Microwave technology; Optical reflection; Optical surface waves; Semiconductor impurities; Semiconductor materials; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Communications, Networking and Mobile Computing, 2009. WiCom '09. 5th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3692-7

Electronic_ISBN

978-1-4244-3693-4

Type

conf

DOI

10.1109/WICOM.2009.5302153

Filename

5302153