Formation of SiC nanostructures on Si surface using C60 by spinning technique

SiC nanocrystals growth through the surface reaction between spin-on C60 dissolved in Carbon Disulphide (CS2) and Si substrate and 800degC (100 rains.) annealed has been investigated. Scanning Electron and Atomic Force Microscopy showed the crests of C60 clusters formed preferentially on the Si substrate steps with 40-60 nm cluster sizes. Silicon carbide nanocrystallite formation after anneal. has been confirmed by X-ray diffraction measurements through the most dominant is the 3C-SiC formed, 6H-SiC in some cases has been formed to be equally dominant showed a monotonic fall in the peak intensities with increasing temperature from 16 K to 300 K. The 416 nm peak at 300 K originating from 6H-SiC is the strongest observed. A simple low cost technique has been developed for SiC nanocrystallite growth on Si suitable for light emission.