Electronic and magnetic properties of ferromagnetic p-(In,Mn)As/n-InAs heterojunctions [spintronic device applications]

Author

May, S.J. ; Wessels, B.W.

Author_Institution

Dept. of Mater. Sci. & Eng., Northwestern Univ., Evanston, IL, USA

fYear

2004

fDate

21-23 June 2004

Firstpage

121

Abstract

In this work, (InMn)As/InAs p-n heterojunctions have been fabricated and their electronic and magnetic properties characterized. The (In,Mn)As films, deposited by atmospheric pressure meta organic vapor phase epitaxy, are ferromagnetic at room temperature as determined by magneto-optical Kerr effect (MOKE) measurements and variable-temperature magnetic force microscopy. The J-V characteristics of these junctions were measured over the temperature range of 78 to 300 K. In addition, the magnetic field dependence of the I-V characteristics has been measured. The magnetoresistive properties of these heterojunctions suggest they may be suitable for use in spintronic devices.

Keywords

Kerr electro-optical effect; ferromagnetic materials; indium compounds; magnetic force microscopy; magnetoelectronics; magnetoresistive devices; manganese compounds; p-n heterojunctions; vapour phase epitaxial growth; 78 to 300 K; I-V characteristics magnetic field dependence; J-V characteristics; MOKE; MnAs-InAs; atmospheric pressure meta organic vapor phase epitaxy; ferromagnetic films; ferromagnetic p-n heterojunctions; heterojunction magnetoresistive properties; magneto-optical Kerr effect; spintronic devices; variable-temperature magnetic force microscopy; Atmospheric measurements; Epitaxial growth; Heterojunctions; Magnetic field measurement; Magnetic films; Magnetic properties; Magnetoelectronics; Magnetooptic devices; Magnetooptic effects; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

ISSN

1548-3770

Print_ISBN

0-7803-8284-6

Type

conf

DOI

10.1109/DRC.2004.1367813

Filename

1367813