DocumentCode
2103846
Title
SCFL static frequency divider using InAIAs/InGaAs/InP HEMTs
Author
Umeda, Yohtaro ; Osafune, Kazuo ; Enoki, Takatomo ; Ito, Hiroshi ; Ishil, Yasunobu
Author_Institution
NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, 243-01 Japan, Tel: +81 462 40 2792, Fax: +81 462 40 2872
Volume
1
fYear
1995
fDate
4-4 Sept. 1995
Firstpage
222
Lastpage
228
Abstract
38.6-GHz operation of an SCFL static binary frequency dvider is achieved using 0.1-¿m-gate InAIAs/InGaAs/InP HEMTs with an InP-recess-etch stopper. This is the highest operation frequency for static frequency dividers using FETs, as far as we know. In addition, propagation delay time of an SCFL inverter estimated from a ring oscillator is 6.6 ps/gate. The tranmission delay due to interconnection lines is investigated by taking account of travelling wave effects. Delay time analysis for above circuits proves that the transmission delay is much larger than the parasitic charging delay and as much as the intrinsic gate delay in such high speed. A comparative study shows the validity of the transmission delay and LC-line approximation, and reveals the importance of shortening signal path length and matching impedance between driver circuits and interconnection lines in ultra-high-speed operation.
Keywords
Delay effects; FETs; Frequency conversion; HEMTs; Indium gallium arsenide; Indium phosphide; Integrated circuit interconnections; Inverters; MODFETs; Propagation delay;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1995. 25th European
Conference_Location
Bologna, Italy
Type
conf
DOI
10.1109/EUMA.1995.336950
Filename
4137163
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