Bandgap reduction in dilute InPN grown by liquid phase epitaxy

Author

Das, T.D. ; Das, S.C. ; Dhar, S.

Author_Institution

Dept. of Electron. Sci., Univ. of Calcutta, Kolkata

fYear

2008

fDate

22-24 Dec. 2008

Firstpage

275

Lastpage

282

Abstract

We report the absorption and photoluminescence (PL) properties of dilute InPN layers grown by liquid phase epitaxy. All samples were characterized by high resolution X-ray diffraction at room temperature. The band anticrossing model accounts very well for recent experimental results obtained on different samples. Our results indicate that a maximum amount of 0.2% nitrogen has been incorporated in the material with a band gap lowering consistent with expectations. Our theoretical results provide a good agreement with the available experimental data.

Keywords

III-V semiconductors; X-ray diffraction; absorption coefficients; indium compounds; photoluminescence; semiconductor epitaxial layers; HRXRD; III-V semiconductor; InPN; absorption coefficient; band anticrossing model; bandgap reduction; high resolution X-ray diffraction; liquid phase epitaxy layer; optical absorption properties; photoluminescence properties; temperature 293 K to 298 K; Epitaxial growth; Etching; III-V semiconductor materials; Indium phosphide; Lattices; Nitrogen; Photoluminescence; Photonic band gap; Substrates; Temperature; Dilute Nitride; Energy Gap; HRXRD; Liquid Phase Epitaxy; Photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Optoelectronic Materials and Devices, 2008. AOMD 2008. 2nd National Workshop on

Conference_Location

Varanasi

Print_ISBN

978-0-230-63718-4

Type

conf

Filename

5075718