• DocumentCode
    2105203
  • Title

    Epitaxially Integrated Semiconductor Nanowires for Nanoscale Electronics, Photonics and NEMS

  • Author

    Islam, M. Saif

  • Author_Institution
    Univ. of California Davis, Davis
  • fYear
    2007
  • fDate
    21-25 Oct. 2007
  • Firstpage
    707
  • Lastpage
    708
  • Abstract
    Mass-manufacturable interfacing and integration of functional nanowires in devices and systems is the major challenge in reproducible fabrication of dense and low-cost nano-device arrays. We present an overview of our epitaxial interfacing technique for integrating semiconductor nanowires in nanodevices that not only resulted in highly reproducible and linear ohmic contacts with exceptionally low noise levels but also exhibits excellent bond strength due to a self-welding effect.
  • Keywords
    monolithic integrated circuits; nanoelectronics; nanowires; ohmic contacts; NEMS; bond strength; epitaxial interfacing technique; epitaxially integrated semiconductor nanowires; linear ohmic contacts; nanodevice arrays; nanoscale electronics; noise levels; self-welding effect; Electrodes; Fabrication; Insulation; Integrated circuit synthesis; Nanobioscience; Nanoelectromechanical systems; Nanoscale devices; Nanowires; Ohmic contacts; Photonics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-0925-9
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2007.4382603
  • Filename
    4382603