DocumentCode
2105203
Title
Epitaxially Integrated Semiconductor Nanowires for Nanoscale Electronics, Photonics and NEMS
Author
Islam, M. Saif
Author_Institution
Univ. of California Davis, Davis
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
707
Lastpage
708
Abstract
Mass-manufacturable interfacing and integration of functional nanowires in devices and systems is the major challenge in reproducible fabrication of dense and low-cost nano-device arrays. We present an overview of our epitaxial interfacing technique for integrating semiconductor nanowires in nanodevices that not only resulted in highly reproducible and linear ohmic contacts with exceptionally low noise levels but also exhibits excellent bond strength due to a self-welding effect.
Keywords
monolithic integrated circuits; nanoelectronics; nanowires; ohmic contacts; NEMS; bond strength; epitaxial interfacing technique; epitaxially integrated semiconductor nanowires; linear ohmic contacts; nanodevice arrays; nanoscale electronics; noise levels; self-welding effect; Electrodes; Fabrication; Insulation; Integrated circuit synthesis; Nanobioscience; Nanoelectromechanical systems; Nanoscale devices; Nanowires; Ohmic contacts; Photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382603
Filename
4382603
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