Compact Ga-Doped ZnO Nanorod Thin Film for Making High-Performance Transparent Resistive Switching Memory

Author

Chun-Yang Huang ; Yen-Ting Ho ; Chung-Jung Hung ; Tseung-Yuen Tseng

Author_Institution

Dept. of Electron. EngineeringInstitute of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

61

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

3435

Lastpage

3441

Abstract

Fully transparent and stable resistive switching characteristics in resistive random access memory (RRAM) device consisting of ITO/Ga doped ZnO (GZO)/ZnO/ITO architecture are proposed. The GZO nanorods with well aligned and extremely dense properties are considered as a thin film for RRAM device. The oxygen vacancies can be confined and migrate along grain boundaries in the GZO nanorod film. Therefore, the weakest point for formation and rupture of conductive filament can be limited at the interface between GZO nanorod film and ZnO seeding layer. Compared with ITO/ZnO/ITO device, a significant improvement in the distribution of high resistance state (HRS) and low resistance state (LRS) during resistance switching is demonstrated in the present device. In addition, a high endurance of more than 7000 cycles with the resistance ratios of HRS/LRS about 200 times is achieved in this device. The ITO/GZO/ZnO/ITO device is a good candidate for the transparent RRAM application.

Keywords

III-V semiconductors; gallium; grain boundaries; indium compounds; nanoelectronics; nanorods; random-access storage; semiconductor thin films; switching circuits; tin compounds; vacancies (crystal); wide band gap semiconductors; zinc compounds; HRS; LRS; RRAM device; ZnO:Ga; ZnO:ITO; compact nanorod thin film; conductive filament; fully transparent switching characteristics; grain boundaries; high resistance state distribution; high-performance transparent resistive switching memory; low resistance state; oxygen vacancies; resistive random access memory; seeding layer; stable resistive characteristics; Electrodes; Grain boundaries; Indium tin oxide; Nanoscale devices; Resistance; Switches; Zinc oxide; Endurance; Ga doped; ZnO; grain boundary; nanorod; orientation; resistive random access memory (RRAM); resistive switching (RS); transparent;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2343631

Filename

6875903