215W pulsed class A UHF power amplification based on SiC bipolar technology

Author

Huang, Chih-Fang ; Perez, Ivan ; Zhao, Feng ; Torvik, John ; Irwin, Ronda ; Torvik, Kristoffer ; Abrhaley, Fish ; Van Zeghbroeck, Bart

Author_Institution

PowerSicel Inc., Boulder, CO, USA

fYear

2004

fDate

21-23 June 2004

Firstpage

2

Abstract

4H-SiC BJTs with multiple finger structure were designed and fabricated. Large devices with 0.52 mm² active area show DC gain around 18. A class A power amplifier is designed at 450 MHz using a single cell large device. Matching at the input is done with a parallel capacitor and a transmission line. The device is biased at V_CE=180 V and pulsed with 0.1 % duty cycle to avoid self-heating. A maximum output power of 215 W is achieved with a power gain of 7.5 dB, corresponding to a power density of 4.3 W/mm normalized to emitter finger length.

Keywords

UHF bipolar transistors; UHF power amplifiers; impedance matching; power bipolar transistors; silicon compounds; wide band gap semiconductors; 180 V; 215 W; 450 MHz; 4H-SiC BJT; 7.5 dB; SiC; UHF power amplifier; emitter finger length; input matching; large active area devices; maximum output power; multiple finger structure; parallel capacitor; power density; pulsed class-A power amplifier; pulsed duty cycle; self-heating; transmission line; Current density; Doping; Fingers; Gain; Power amplifiers; Power generation; Pulse amplifiers; Radio frequency; Silicon carbide; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

ISSN

1548-3770

Print_ISBN

0-7803-8284-6

Type

conf

DOI

10.1109/DRC.2004.1367897

Filename

1367897