A 0.18 /spl mu/m SiGe BiCMOS receiver and transmitter chipset for SONET OC-768 transmission systems

Author

Meghelli, M. ; Rylyakov, A.V. ; Zier, S.J. ; Sorna, M. ; Friedman, D.

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2003

fDate

13-13 Feb. 2003

Firstpage

230

Abstract

A BiCMOS CDR/1:4-DEMUX and CMU/4:1-MUX chipset targeting 40-43 Gb/s optical communications is implemented in 0.18 /spl mu/m SiGe. At 43 Gb/s and up to 100/spl deg/C chip temperature, both ICs operate at BER <10/sup -15/ and <210 fs RMS clock jitter. The receiver and transmitter chips dissipate 2.8 W and 2.3 W, respectively, from a -3.6 V supply.

Keywords

BiCMOS digital integrated circuits; Ge-Si alloys; SONET; demultiplexing equipment; multiplexing equipment; optical receivers; optical transmitters; timing jitter; -3.6 V; 0.18 /spl mu/m SiGe; 0.18 micron; 100 C; 2.3 W; 2.8 W; 40 to 43 Gbit/s; BER; BiCMOS CDR/1:4-DEMUX; CMU/4:1-MUX; RMS clock jitter; SONET OC-768 transmission systems; SiGe; SiGe BiCMOS receiver transmitter chipset; chip temperature; optical communications; power dissipation; receiver chip; transmitter chip; BiCMOS integrated circuits; Bit error rate; Clocks; Germanium silicon alloys; Optical fiber communication; Optical receivers; Optical transmitters; SONET; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-7707-9

Type

conf

DOI

10.1109/ISSCC.2003.1234279

Filename

1234279