Pulsed-IV and RF waveform measurements of unique high-K dielectric GaN MOSFETs

Author

Roff, Chris ; McGovern, Peter ; Benedikt, Johannes ; Tasker, Paul J. ; Johnson, Mark A L ; Barlage, Doug W. ; Sutton, W. ; Braddock, David

Author_Institution

Cardiff Sch. of Eng., Cardiff Univ., Cardiff

fYear

2008

fDate

13-14 May 2008

Firstpage

1

Lastpage

4

Abstract

This paper demonstrates the capabilities of a state of the art RF waveform measurement system to explore the RF performance of new compound semiconductor MOSFET devices. Pulsed IV and time domain waveform measurements are presented for recently developed GaN MOSFET devices with high-K epitaxially grown gate dielectrics. The results demonstrate promising performance for first generation devices, with RF power densities above 1 W/mm. The waveform measurements point the way forward for improving future devices by giving direct visual feedback on where performance is being lost.

Keywords

III-V semiconductors; MOSFET; dielectric materials; gallium compounds; semiconductor device testing; GaN; RF waveform measurement system; compound semiconductor MOSFET devices; first generation devices; high-K epitaxial grown gate dielectrics; pulsed-IV; Dielectric devices; Dielectric measurements; Gallium nitride; High K dielectric materials; High-K gate dielectrics; MOSFETs; Power generation; Pulse measurements; Radio frequency; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Communications, Antennas and Electronic Systems, 2008. COMCAS 2008. IEEE International Conference on

Conference_Location

Tel-Aviv

Print_ISBN

978-1-4244-2097-1

Electronic_ISBN

978-1-4244-2098-8

Type

conf

DOI

10.1109/COMCAS.2008.4562790

Filename

4562790