DocumentCode

2111202

Title

A Two-dimensional Process Model For Silicide Growth

Author

Li, C.M. ; Crandle, T. ; Temkin, M. ; Hopper, P.

Author_Institution

SILVACO International

fYear

1993

fDate

14-15 May 1993

Firstpage

68

Lastpage

69

Keywords

Atomic layer deposition; Chemicals; Equations; Impurities; Oxidation; Semiconductor process modeling; Silicides; Silicon; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on

Print_ISBN

0-7803-1338-0

Type

conf

DOI

10.1109/VPAD.1993.724726

Filename

724726