DocumentCode
2111516
Title
Characteristics and applications of InGaN micro-light emitting diodes on Si substrates
Author
Pengfei Tian ; McKendry, Jonathan J. D. ; Zheng Gong ; Shuailong Zhang ; Watson, Scott ; Dandan Zhu ; Watson, I.M. ; Erdan Gu ; Kelly, Anthony E. ; Humphreys, C.J. ; Dawson, Martin D.
Author_Institution
Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
fYear
2013
fDate
8-12 Sept. 2013
Firstpage
97
Lastpage
98
Abstract
InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; micro-optics; wide band gap semiconductors; InGaN; bit rate 400 Mbit/s; data transmission rate; frequency 270 MHz; high modulation bandwidth; microdisplay; microlight emitting diodes on Si substrates; Arrays; Bandwidth; Light emitting diodes; Modulation; Physics; Silicon; Substrates; GaN; Si; bandwidth; micro-LEDs;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2013 IEEE
Conference_Location
Bellevue, WA
Print_ISBN
978-1-4577-1506-8
Type
conf
DOI
10.1109/IPCon.2013.6656387
Filename
6656387
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