DocumentCode
2111791
Title
High performance MEMS 0.18μm RF- CMOS inductors
Author
Yishay, R. Ben ; Stolyarova, S. ; Shapira, S. ; Nemirovsky, Y.
Author_Institution
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa
fYear
2008
fDate
13-14 May 2008
Firstpage
1
Lastpage
7
Abstract
This work presents the fabrication and characterization of on-chip micromachined spiral inductors in a commercially available 0.18mum CMOS process provided by TOWER Semiconductors Ltd. It explores the possibility to reduce parasitic effects and extending high frequency performance by applying a maskless micromachining post processing to create fully integrated inductors, suspended over the substrate with inter-turn dielectric removed.
Keywords
CMOS integrated circuits; inductors; micromachining; micromechanical devices; radiofrequency integrated circuits; MEMS; RF-CMOS inductors; inter-turn dielectric; maskless micromachining post processing; on-chip micromachined spiral inductors; size 0.18 mum; CMOS process; Conductivity; Frequency; Inductors; Micromechanical devices; Parasitic capacitance; Q factor; Silicon; Spirals; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves, Communications, Antennas and Electronic Systems, 2008. COMCAS 2008. IEEE International Conference on
Conference_Location
Tel-Aviv
Print_ISBN
978-1-4244-2097-1
Electronic_ISBN
978-1-4244-2098-8
Type
conf
DOI
10.1109/COMCAS.2008.4562816
Filename
4562816
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