• DocumentCode
    2114526
  • Title

    Compound semiconductor electro-optic modulators for microwave photonics applications

  • Author

    Dagli, Nadir

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
  • fYear
    2013
  • fDate
    8-12 Sept. 2013
  • Firstpage
    195
  • Lastpage
    196
  • Abstract
    Compound semiconductor electro-optic modulators based on substrate-removal are described. Modulators with metal and buried electrodes in bulk GaAs have Vπ of 5 V and 0.3 V respectively. For both types bandwidths exceeding 35 GHz were also demonstrated.
  • Keywords
    III-V semiconductors; electro-optical modulation; gallium arsenide; microwave photonics; GaAs; bulk GaAs; buried electrode; compound semiconductor electro-optic modulators; metal electrode; microwave photonics applications; substrate removal; voltage 0.3 V; voltage 5 V; Electrodes; Electrooptic modulators; Optical device fabrication; Optical waveguides; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2013 IEEE
  • Conference_Location
    Bellevue, WA
  • Print_ISBN
    978-1-4577-1506-8
  • Type

    conf

  • DOI
    10.1109/IPCon.2013.6656501
  • Filename
    6656501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2114526