DocumentCode
2114721
Title
A 100-element MODFET grid amplifier
Author
De Lisio, M.P. ; Cheh-Ming Liu ; Moussessian, A. ; Rutledge, D.B. ; Rosenberg, J.J.
Author_Institution
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Volume
2
fYear
1995
fDate
18-23 June 1995
Firstpage
1304
Abstract
A 100-element quasi-optical amplifier is presented. The active devices are custom-fabricated modulation-doped field-effect transistors (MODFETs). Common-mode oscillations were suppressed using resistors in the input gate leads. The grid has 9 dB of gain at 10.1 GHz. The 3-dB bandwidth is 1.2 GHz. We present a model for the gain of the grid versus frequency and compare measurement with theory.
Keywords
microwave power amplifiers; power amplifiers; resistors; semiconductor device models; semiconductor device testing; 1.2 GHz; 10.1 GHz; 100 element MODFET grid amplifier; 100 element quasioptical amplifier; 3-dB bandwidth; 9 dB; active devices; common mode oscillation suppression; frequency; gain; input gate leads; measurement; modulation doped field effect transistors; resistors; theory; Capacitors; Differential amplifiers; HEMTs; Horn antennas; Laboratories; MODFETs; Polarization; Resistors; Slot antennas; Transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation Society International Symposium, 1995. AP-S. Digest
Conference_Location
Newport Beach, CA, USA
Print_ISBN
0-7803-2719-5
Type
conf
DOI
10.1109/APS.1995.530259
Filename
530259
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