Effects of a strained layer on transport characteristics of tunnel transistors

Author

Yamamoto, Masahiro ; Kitayama, Tatsuro ; Minari, Hideki ; Mori, Nobuya

Author_Institution

Grad. Sch. of Eng., Osaka Univ., Suita, Japan

fYear

2011

fDate

19-20 May 2011

Firstpage

64

Lastpage

65

Abstract

Atomistic transport simulation based on non-equilibrium Green´s function and empirical tight-binding methods has been performed for two-dimensional silicon n-i-p devices with a thin strained layer near the source-channel interface. Simulation results show that a compressive strained layer in the source region and a tensile strained layer in the channel region enhance the Zener tunneling current.

Keywords

Green´s function methods; MOSFET; elemental semiconductors; silicon; tight-binding calculations; tunnel transistors; MOSFET; Si; Zener tunneling current; atomistic transport simulation; compressive strained layer; empirical tight-binding methods; nonequilibrium Green´s function; source-channel interface; strained layer effect; tensile strained layer; tunnel transistors; two-dimensional silicon n-i-p devices; Current density; Insulators; Logic gates; Silicon; Strain; Transistors; Tunneling; Empirical tight-binding method; Non-equilibrium Green´s function method; Quantum transport; Strain; Tunnel transistor; Zener tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944846

Filename

5944846