• DocumentCode
    2116670
  • Title

    Ultra-fast (325 GHz) near-ballistic uni-traveling-carrier photodiodes with high sub-THz output power under a 50Ω load

  • Author

    Jin-Wei Shi ; Jhih-Min Wun ; Feng-Wei Lin ; Bowers, John E.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
  • fYear
    2013
  • fDate
    8-12 Sept. 2013
  • Firstpage
    354
  • Lastpage
    355
  • Abstract
    We demonstrate near-ballistic uni-traveling-carrier photodiodes with record optical-to-electrical bandwidth (325 GHz) under 50Ω loads. By using a flip-chip bonding package, high photocurrent (16 mA) and record-high photo-generated power (-1.8 dBm) at 325 GHz are achieved.
  • Keywords
    flip-chip devices; integrated optoelectronics; photodiodes; photoemission; bandwidth 325 GHz; current 16 mA; flip-chip bonding package; high subTHz output power; optical-to-electrical bandwidth; photocurrent; record-high photogenerated power; resistance 50 ohm; ultrafast near-ballistic unitraveling carrier photodiodes; Bandwidth; Bonding; Flip-chip devices; Frequency measurement; Optical waveguides; Power generation; Power measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2013 IEEE
  • Conference_Location
    Bellevue, WA
  • Print_ISBN
    978-1-4577-1506-8
  • Type

    conf

  • DOI
    10.1109/IPCon.2013.6656583
  • Filename
    6656583
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2116670