DocumentCode
2116725
Title
GaAs MMICs for Cordless and Cellular Telecommunications: The Fight Against Silicon Odds
Author
Rocchi, Marc
Author_Institution
LEP / Philips Microwave Limeil, 22 avenue Descaites, 94453 Limeil-Brévannes, France. tel: 33.1.45.10.68.96, fax: 33.1.45.10.69.59
Volume
1
fYear
1994
fDate
5-9 Sept. 1994
Firstpage
36
Lastpage
47
Abstract
For a few years now the civil market for GaAs MMICs has budded into application niches such as 12 GHz DBS dowinconverters. The next large application niche which is rapidly emerging concerns low voltage L-band receive and transmit front-ends for cordless and cellular phones. In spite of forceful Silicon slurs, some GaAs MMICs have already made their way into coimmercially available handsets for GSM 900 MHz and DECT 1900 MHz standards. Tlis is readily accounted for by the swift change in the mobile market needs and the respective availability of low cost GaAs & Silicon RF IC products. After a thorough analysis of the low voltage performance, low cost and low weight requirements derived from handset specifications, an optimum RF front-end partitioning between Silicon and GaAs can be determined resulting in an optimumn RF cHip set.
Keywords
Cellular phones; GSM; Gallium arsenide; L-band; Low voltage; MMICs; Radio frequency; Satellite broadcasting; Silicon; Telephone sets;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1994. 24th European
Conference_Location
Cannes, France
Type
conf
DOI
10.1109/EUMA.1994.337196
Filename
4138241
Link To Document