• DocumentCode
    2116776
  • Title

    C-V characterization of n-GaN MOS diodes with an ALD Al2O3 dielectric layer

  • Author

    Nakane, H. ; Yamada, N. ; Tokuda, H. ; Kuzuhara, M.

  • Author_Institution
    Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
  • fYear
    2011
  • fDate
    19-20 May 2011
  • Firstpage
    82
  • Lastpage
    83
  • Abstract
    In this paper, an n-GaN metal-oxide-semiconductor (MOS) diode was fabricated using atomic layer deposited (ALD) Al2O3. Prior to Al2O3 deposition, the n-GaN surface was treated with (NH4)2S solution. As a result, interface state density of the treated n/n+-GaN MOS diode was significantly reduced compared to that without (NH4)2S treatment.
  • Keywords
    III-V semiconductors; MIS devices; alumina; atomic layer deposition; dielectric thin films; gallium compounds; semiconductor diodes; wide band gap semiconductors; ALD dielectric layer; C-V characterization; GaN-Al2O3; atomic layer deposited dielectric layer; metal oxide semiconductor diode; n-GaN MOS diode; Aluminum oxide; Capacitance-voltage characteristics; Gold; Interface states; Logic gates; Semiconductor diodes; Surface treatment; GaN; MOS; diode;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-61284-145-8
  • Electronic_ISBN
    978-1-61284-147-2
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2011.5944855
  • Filename
    5944855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2116776