Radiation-proof characteristic of ZnO/ZnMgO HFETs

Author

Yabe, T. ; Aoki, T. ; Higashiyama, Y. ; Koike, K. ; Sasa, S. ; Yano, M. ; Gonda, S. ; Ishigami, R. ; Kume, K.

Author_Institution

Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan

fYear

2011

fDate

19-20 May 2011

Firstpage

90

Lastpage

91

Abstract

We studied the radiation hardness of the ZnO/ZnMgO heterostructure field-effect transistors (HFETs) by irradiating 200 MeV proton beam for fluences up to 3.6 × 10¹⁴ p/cm². The change of the characteristics was monitored and compared with those of GaAs HEMTs. The saturation drain current for the ZnO/ZnMgO HFETs decreased by 10% while that of GaAs HEMTs decreased by 50% at proton beam fluence of 3.6 × 10¹⁴ p/cm². The results demonstrate the superior radiation hardness of the ZnO/ZnMgO HFETs. The fact that little resistance change was observed for the as-grown ZnO/ZnMgO heterostructure implies the reduced drain current observed for HFETs might be caused by degradation of gate dielectric.

Keywords

II-VI semiconductors; high electron mobility transistors; magnesium compounds; proton effects; radiation hardening (electronics); wide band gap semiconductors; zinc compounds; HEMT; HFET; ZnO-ZnMgO; electron volt energy 200 MeV; gate dielectric degradation; heterostructure field-effect transistors; high electron mobility transistors; proton beam; radiation hardness; radiation-proof characteristic; Gallium arsenide; HEMTs; MODFETs; Particle beams; Radiation effects; Resistance; Zinc oxide; 200 MeV proton; ZnO; ZnO/ZnMgO HFETs; radiation hardness;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-61284-145-8

Electronic_ISBN

978-1-61284-147-2

Type

conf

DOI

10.1109/IMFEDK.2011.5944859

Filename

5944859