• DocumentCode
    2116933
  • Title

    High voltage silicon integrated circuits

  • Author

    Cauge, T. ; Kocsis, J. ; Polata, B.

  • Author_Institution
    Signetics Corporation 811 E. Arques Avenue Sunnyvale, Cal. 94086
  • fYear
    1970
  • fDate
    20-21 April 1970
  • Firstpage
    60
  • Lastpage
    64
  • Abstract
    Up until recently integrated circuits have been synonomous with low voltage applications. The reasons for this are numerous but suffice it to say that the conventional planar IC technology is not conducive to high voltage performance in the individual circuit elements. This paper will describe two modifications of the technology which make high voltage I C s a reality. The restrictions on power dissipation still remain since the power handling capability of an IC as such is primarily determined by chip size and packaging. However, there are many applications for high voltage and low power, and by way of introducing the problems and solutions of such an application, the following simple but useful circuit will be used as a vehicle for discussion.
  • Keywords
    Dielectrics; Electric breakdown; Integrated circuits; Inverters; Junctions; Low voltage; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1970 IEEE
  • Conference_Location
    Greenlelt, Maryland, USA
  • ISSN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PECS.1970.7066241
  • Filename
    7066241