DocumentCode
2116933
Title
High voltage silicon integrated circuits
Author
Cauge, T. ; Kocsis, J. ; Polata, B.
Author_Institution
Signetics Corporation 811 E. Arques Avenue Sunnyvale, Cal. 94086
fYear
1970
fDate
20-21 April 1970
Firstpage
60
Lastpage
64
Abstract
Up until recently integrated circuits have been synonomous with low voltage applications. The reasons for this are numerous but suffice it to say that the conventional planar IC technology is not conducive to high voltage performance in the individual circuit elements. This paper will describe two modifications of the technology which make high voltage I C s a reality. The restrictions on power dissipation still remain since the power handling capability of an IC as such is primarily determined by chip size and packaging. However, there are many applications for high voltage and low power, and by way of introducing the problems and solutions of such an application, the following simple but useful circuit will be used as a vehicle for discussion.
Keywords
Dielectrics; Electric breakdown; Integrated circuits; Inverters; Junctions; Low voltage; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1970 IEEE
Conference_Location
Greenlelt, Maryland, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PECS.1970.7066241
Filename
7066241
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