• DocumentCode
    2117141
  • Title

    Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics

  • Author

    Wei, Guobin ; Murakami, Hideki ; Fujioka, Tomohiro ; Ohta, Akio ; Goto, Yuta ; Higashi, Seiichiro ; Miyazaki, Seiichi

  • Author_Institution
    Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Hiroshima, Japan
  • fYear
    2011
  • fDate
    19-20 May 2011
  • Firstpage
    110
  • Lastpage
    111
  • Abstract
    An ultrathin ~1 nm TaOx layer was inserted at the interface between a top Pt electrode and TiO2 as a restive switching dielectric to investigate resistive switching characteristics. A marked change in the initial resistance state and an improvement of the endurance were observed. These results can be interpreted as due to the TaOx layer working as an oxygen reservoir.
  • Keywords
    dielectric materials; switches; Pt-TiO2; Pt/TiO2 interface; initial resistance state; oxygen reservoir; resistive switching characteristics; switching dielectric; ultrathin TaOx layer; Bonding; Dielectrics; Electrodes; Nonvolatile memory; Reservoirs; Resistance; Switches; redox reaction; stack structure; tantalum oxide; titanium oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-61284-145-8
  • Electronic_ISBN
    978-1-61284-147-2
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2011.5944869
  • Filename
    5944869
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2117141