• DocumentCode
    2117185
  • Title

    Increase in resistivity of indium-tin-oxide films spin-coated on titanium-dioxides

  • Author

    Tagawa, Toshinari ; Fujimoto, Takashi ; Nakamura, Kazuhiro

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Kansai Univ., Suita, Japan
  • fYear
    2011
  • fDate
    19-20 May 2011
  • Firstpage
    112
  • Lastpage
    113
  • Abstract
    ITO and TiO2 films were prepared on silicon substrate using spin-coating method. Three types of samples were prepared for comparison. They were ITO/TiO2(78nm-thick)/Si, ITO/TiO2(25nm-thick)/Si and ITO/Si. The resistivity of an ITO film prepared on TiO2 was larger than that on Si. Furthermore, the resistivity became larger with increasing the thickness of the underlying TiO2 layer.
  • Keywords
    electrical resistivity; indium compounds; silicon; spin coating; tin compounds; ITO-Si; ITO-TiO2; silicon substrate; size 25 nm; size 78 nm; spin coating method; thin film resistivity; Annealing; Conductivity; Films; Indium tin oxide; Silicon; Substrates; Tin; Indium-Tin-Oxide (ITO); Resistivity; Spin-Coating; Titanium-Dioxide (TiO2);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-61284-145-8
  • Electronic_ISBN
    978-1-61284-147-2
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2011.5944870
  • Filename
    5944870
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2117185