DocumentCode
2117514
Title
Evaluation of point field sensing in IGBT modules for high bandwidth current measurement
Author
Schneider, Patrick E. ; Lorenz, Robert D.
Author_Institution
WEMPEC, Univ. of Wisconsin - Madison, Madison, WI, USA
fYear
2011
fDate
17-22 Sept. 2011
Firstpage
1950
Lastpage
1957
Abstract
This paper evaluates field-based current sensing integration in power electronic modules. Point field detectors, such as GMR detectors, can provide high bandwidth (DC to MHz) current measurements with a small footprint (1.26 mm2). Magnetic fields surrounding a current carrying conductor are frequency dependent, so the 5% Flat Bandwidth (FBW) metric is used to evaluate placement of the point field detectors to maximize the bandwidth of the current measurement. A significant contribution of this paper is an evaluation of the placement of point field detectors inside a power switching module. The paper focuses on detector placement for the interconnect structures commonly found in power switching modules. Experimental and finite element analysis of wire bond structures with multiple wire bonds and lead frame structures are evaluated for high bandwidth sensing performance.
Keywords
electric current measurement; electric sensing devices; finite element analysis; insulated gate bipolar transistors; radiofrequency measurement; FBW metric; GMR detectors; IGBT modules; field-based current sensing integration; finite element analysis; flat bandwidth metric; high bandwidth current measurement; lead frame structures; magnetic fields; point field detectors; point field sensing; power electronic modules; power switching modules; wire bonds; Conductors; Copper; Detectors; Magnetic field measurement; Materials; Switches; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2011 IEEE
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4577-0542-7
Type
conf
DOI
10.1109/ECCE.2011.6064025
Filename
6064025
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