• DocumentCode
    2117774
  • Title

    Accuracy improvements in microwave transistor noise parameters extraction

  • Author

    Vasilescu, G ; Alquie, G.

  • Author_Institution
    Univ. Pierre et Marie Curie, Paris, France
  • Volume
    2
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    361
  • Abstract
    This paper presents the influence of the choice of source admittances on the accuracy of noise parameters extraction, when using the noise parameter extraction method proposed by Vasilescu. The results obtained for three different microwave transistors are presented. The best and the worst distributions are put into evidence
  • Keywords
    Schottky gate field effect transistors; electric admittance; electric noise measurement; microwave measurement; microwave transistors; semiconductor device noise; MESFET; accuracy; microwave transistor noise parameter extraction; microwave transistors; noise parameter extraction method; noise parameters extraction; source admittance; Admittance; Data mining; Impedance measurement; Microwave devices; Microwave transistors; Noise figure; Noise measurement; Parameter extraction; Redundancy; Tuners;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651186
  • Filename
    651186
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2117774