DocumentCode
2117808
Title
Design and performance of a high frequency silicon carbide inverter
Author
Shen, Miaosen ; Krishnamurthy, Shashank ; Mudholkar, Mihir
Author_Institution
Power Electron. Group, United Technol. Res. Center, East Hartford, CT, USA
fYear
2011
fDate
17-22 Sept. 2011
Firstpage
2044
Lastpage
2049
Abstract
The advantages offered by wide band gap materials enable the design of converters with high power density for high performance applications. This paper presents the design and test results for a high frequency (400kHz) hard switched two level silicon carbide based three phase inverter. Using device and system parasitic models, the losses in the converter are predicted and validated using experimental tests. A calorimetric setup is utilized to accurately measure the performance of the inverter and efficiencies of 91% are obtained at a load of 4kVA and a switching frequency of 400kHz.
Keywords
invertors; silicon compounds; wide band gap semiconductors; SiC; apparent power 4 kVA; efficiency 91 percent; frequency 400 kHz; high frequency hard switched two level silicon carbide; high frequency silicon carbide inverter; three phase inverter; wide band gap materials; Current measurement; Inverters; Power measurement; Silicon carbide; Switches; Switching frequency; Voltage measurement; high frequency; silicon carbide; three phase inverter;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2011 IEEE
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4577-0542-7
Type
conf
DOI
10.1109/ECCE.2011.6064038
Filename
6064038
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