DocumentCode
2118382
Title
New designer dielectric metamaterial with isotropic photonic band gap
Author
Nahal, Geev ; Weining Man ; Florescu, Marian ; Steinhardt, Paul J. ; Torquato, Salvatore ; Chaikin, Paul M. ; Mullen, Ruth Ann
Author_Institution
San Francisco State Univ., San Francisco, CA, USA
fYear
2013
fDate
8-12 Sept. 2013
Firstpage
480
Lastpage
482
Abstract
A new designer dielectric metamaterial featuring an isotropic photonic bandgap at 1550 nm wavelength designed as a finite thickness, 220 nm thick 2d slab, is fabricated in a CMOS-compatible silicon-on-insulator process. This “hyperuniform disordered solid” (HUDS) is neither crystalline nor quasicrystalline.
Keywords
dielectric materials; optical metamaterials; photonic band gap; silicon-on-insulator; CMOS-compatible silicon-on-insulator process; designer dielectric metamaterial; finite thickness; hyperuniform disordered solid; isotropic photonic band gap; size 220 nm; wavelength 1550 nm; Couplers; Educational institutions; Optical waveguides; Photonic band gap; Photonics; Silicon; HUDS; hyperuniform disordered solid; hyperuniform disordered structure; metamaterial; photonic band gap; siliconon-insulator;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2013 IEEE
Conference_Location
Bellevue, WA
Print_ISBN
978-1-4577-1506-8
Type
conf
DOI
10.1109/IPCon.2013.6656646
Filename
6656646
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