DocumentCode
2118560
Title
Effect of strain on thresholdless Auger recombination in quantum wells
Author
Andreev, Aleksey D. ; Zegrya, Georgy G.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Volume
1
fYear
1996
fDate
9-12 Oct 1996
Firstpage
305
Abstract
Effect of strain on thresholdless Auger recombination processes in quantum wells has been studied theoretically. A detailed analysis of overlap integrals between the initial and final states of the particles has been carried out. It is shown that the strain both qualitatively and quantitatively affects the overlap integral between the electron and hole states. It is demonstrated that the Auger recombination rate decreases as compressive strain increases
Keywords
Auger effect; deformation; electron-hole recombination; semiconductor quantum wells; compressive strain; overlap integrals; quantum wells; semiconductors; thresholdless Auger recombination; Capacitive sensors; Charge carrier processes; Electrons; Gold; Radiative recombination; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557387
Filename
557387
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