Remote plasma chemical vapor deposition for high-efficiency ultra-thin ∼25-microns crystalline Si solar cells

Author

Sarkar, Debdeep ; Onyegam, E.U. ; Saha, Simanto ; Mathew, Lini ; Rao, Rajesh A. ; Hilali, Mohamed M. ; Smith, Roy S. ; Xu, D. ; Jawarani, D. ; Garcia, Raul ; Stout, R. ; Gurmu, A. ; Ainom, M. ; Fossum, Jerry G. ; Banerjee, Sanjay K.

Author_Institution

University of Florida, Gainesville, 32611, USA

fYear

2012

fDate

3-8 June 2012

Firstpage

1

Lastpage

6

Abstract

For the first time, a remote plasma chemical vapor deposition (RPCVD) based c-Si/a-Si heterojunction solar cell process was developed on thin crystalline silicon semiconductor-on-metal (SOM) substrate. In RPCVD systems, deposition temperature, deposition rate, and the distance of the sample from the plasma source can be varied to minimize the surface damage and enhance passivation quality. A silicon heterojunction (HJ) cell without intrinsic a-Si layer passivation was fabricated on an exfoliated ∼25µm c-Si SOM foil, with an efficiency of 13.4% and open-circuit voltage of 645mV. Losses in these devices were analyzed by numerical simulations and optimum device structure was designed and performance predicted.

Keywords

Computer architecture; Heterojunctions; Metals; Microprocessors; Passivation; Photovoltaic cells; Silicon; Amorphous silicon; heterojunctions; photovoltaic cells; remote plasma CVD; solar cells; thin silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), Volume 2, 2012 IEEE 38th

Conference_Location

Austin, TX, USA

Type

conf

DOI

10.1109/PVSC-Vol2.2012.6656713

Filename

6656713