DocumentCode
2120905
Title
Laser annealing of a-Si for realization of polycrystalline Si film on plastic substrate
Author
Mangano, F. ; Caristia, L. ; Costa, N. ; Camalleri, M. ; Ravesi, S. ; Scalese, S. ; Bagiante, S. ; Privitera, V.
Author_Institution
Stradale Primosole 50, Catania
fYear
2007
fDate
2-5 Oct. 2007
Firstpage
271
Lastpage
274
Abstract
In this paper we discuss the laser annealing crystallization of hydrogenated a-Si film deposited at 250degC by means of PECVD technique. Abrupt out-diffusion of hydrogen damages the deposited layers during single shot high energy density laser annealing. On the contrary, a multisteps laser annealing approach, from low to high energy density, allows us to achieve good poly-Si film, without any H-related defect.
Keywords
crystallisation; elemental semiconductors; laser beam annealing; plasma CVD; semiconductor thin films; PECVD technique; Si; Si - Interface; high energy density; hydrogen out-diffusion; laser annealing crystallization; plastic substrate; polycrystalline silicon film; temperature 250 C; Annealing; Chemical lasers; Crystallization; Gas lasers; Hydrogen; Laser beams; Plasma temperature; Plastic films; Semiconductor films; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Thermal Processing of Semiconductors, 2007. RTP 2007. 15th International Conference on
Conference_Location
Catania, Sicily
Print_ISBN
978-1-4244-1228-0
Electronic_ISBN
978-1-4244-1228-0
Type
conf
DOI
10.1109/RTP.2007.4383853
Filename
4383853
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