DocumentCode
2121906
Title
Electrical characterization of a-SiC/c-Si solar cell structures
Author
Perny, Milan ; Saly, Vladimir ; Vary, Michal ; Mikolasek, Miroslav ; Huran, Jozef
Author_Institution
Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Bratislava, Slovakia
fYear
2015
fDate
6-10 May 2015
Firstpage
16
Lastpage
20
Abstract
The heterojunction solar cell structure consists of thin doped amorphous SiC layer and crystalline n-type silicon. Dark and light current-voltage (I–V) measurements were performed in order to obtained basic electric and PV parameters of prepared solar cell structures. Biased complex impedance spectra of Al/a-SiC/c-Si(n)/Al heterojunction in the dark are reported and analyzed. AC equivalent circuit was obtained by fitting of impedance dependences and its electronic components were used to describe the electronic transport properties of prepared structures.
Keywords
Amorphous silicon; Capacitance; Heterojunctions; Impedance; Photovoltaic cells; Photovoltaic systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Technology (ISSE), 2015 38th International Spring Seminar on
Conference_Location
Eger, Hungary
Type
conf
DOI
10.1109/ISSE.2015.7247953
Filename
7247953
Link To Document