High performance MMICs with submillimeter wave InP-based HEMTs

Author

Pobanz, C. ; Matloubian, M. ; Radisic, V. ; Raghavan, G. ; Case, M. ; Micovic, M. ; Hu, M. ; Nguyen, C. ; Weinreb, S. ; Samoska, L.

Author_Institution

LLC, HRL Labs., Malibu, CA, USA

fYear

2000

fDate

2000

Firstpage

67

Lastpage

70

Abstract

This paper presents some recently developed MMICs based on a 0.1-μm gate-length InAlAs/InGaAs/InP HEMT process with an f_max above 600 GHz. InP-based HEMTs provide more power gain and lower noise at higher frequencies than any other transistor, including GaAs-based pHEMTs. A number of state-of-the-art InP HEMT MMICs will be presented. This includes a 150-205 GHz amplifier with 15 dB of gain, a broadband 60-140 GHz amplifier with 25 mW output power at 140 GHz, a high gain Ka-band LNA and static frequency-divider circuits operating at clock rates above 45 GHz. The high frequency performance of a next-generation 0.08-μm-gate InAlAsSb/InAlAs/InGaAs/InP HEMT technology will also be presented

Keywords

HEMT integrated circuits; III-V semiconductors; field effect MMIC; indium compounds; submillimetre wave integrated circuits; 0.08 micron; 0.1 micron; 15 dB; 150 to 205 GHz; 25 mW; 45 GHz; 60 to 140 GHz; 600 GHz; InAlAs-InGaAs-InP; InAlAsSb-InAlAs-InGaAs-InP; InP HEMT MMIC; broadband amplifier; frequency divider; low noise amplifier; power amplifier; submillimeter wave transistor; Broadband amplifiers; Frequency; HEMTs; High power amplifiers; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; MODFETs; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850232

Filename

850232