21 GHz highly efficient composite-channel InP HEMT

Author

Chen, Y.C. ; Grundbacher, R. ; Chin, T.P. ; Barsky, M. ; Lai, R. ; Yang, L.W. ; Block, T. ; Wojtowicz, M. ; Yen, H.C. ; Oki, A. ; Streit, D.C.

Author_Institution

Div. of Electron. & Technol., TRW Inc., Redondo Beach, CA, USA

fYear

2000

fDate

2000

Firstpage

75

Lastpage

78

Abstract

State-of-the-art power performance was demonstrated from the composite-channel InP HEMT by on wafer load-pull measurements at 21 GHz. At a drain bias of 3 V, an 8-finger 500-μm device delivered 23 dBm or 400 mW/mm of output power with 66% power-added efficiency and 10.5 dB associated gain. The linear gain was 16.9 dB. An output power of 24.5 dBm or 560 mW/mm with 60% power-added efficiency and 10 dB associated gain was achieved at 3.5 V drain bias

Keywords

III-V semiconductors; indium compounds; microwave field effect transistors; microwave power transistors; power HEMT; 10 to 16.9 dB; 21 GHz; 3 to 3.5 V; 60 to 66 percent; InP; RF power transistor; composite-channel InP HEMT; power-added efficiency; wafer load-pull measurement; Frequency; Gain; HEMTs; Indium gallium arsenide; Indium phosphide; MMICs; Noise figure; Power amplifiers; Power generation; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850234

Filename

850234